Electronics and Communication Engineering
GATE ECE concept:p-n-junction PYQs
Build your understanding with focused practice from past exam papers.
How to practice concept:p-n-junction
Attempt a question, record the concept and assumptions, then check the available answer. Rework mistakes after revising the relevant concepts. Topic tags can overlap; review the question context.
Questions 1–3 of 3. Imported answers require independent review unless marked reviewed.
Question 25
Open questionECMSQ1 markNeeds review
Consider a p-n junction diode when it is forward biased with 2 V.
Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels,
in the n-side and
in the p-side?Your answerSelect all correct options. You can choose more than one.
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Open questionECNAT2 marksNeeds review
A silicon P-N junction is shown in the figure. The doping in the P region is
and doping in the N region is
. The parameters given areBuilt-in voltage (
) = 0.8 VElectron charge (
) =
CVacuum permittivity (
) =
F/mRelative permittivity of silicon (
) = 12The magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is ________ V.
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Open questionECNAT2 marksNeeds review
As shown, two Silicon (Si) abrupt
-
junction diodes are fabricated with uniform donor doping concentrations of
and
in the
-regions of the diodes, and uniform acceptor doping concentrations of
and
in the
-regions of the diodes, respectively. Assuming that the reverse bias voltage is
built-in potentials of the diodes, the ratio
of their reverse bias capacitances for the same applied reverse bias, is ________. 
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