GATE ECE format:nat PYQs & Answers — Page 5

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Questions 41–50 of 239. Imported answers require independent review unless marked reviewed.

Topic practice 239 questionsPage 5 of 24

A non-degenerate n-type semiconductor has 5% neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band (

) and the donor energy level (

) has a degeneracy of 2. Assuming the thermal voltage to be 20 mV, the difference between

and

(in eV, rounded off to two decimal places) is __________.

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An NMOS transistor operating in the linear region has

of 5

A at

of 0.1 V. Keeping

constant, the

is increased to 1.5 V.

Given that

, the transconductance at the new operating point (in

A/V, rounded off to two decimal places) is ______.

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The photocurrent of a PN junction diode solar cell is 1 mA. The voltage corresponding to its maximum power point is 0.3 V. If the thermal voltage is 30 mV, the reverse saturation current of the diode (in nA, rounded off to two decimal places) is ______.

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The signal-to-noise ratio (SNR) of an ADC with a full-scale sinusoidal input is given to be 61.96 dB. The resolution of the ADC is ______ bits (rounded off to the nearest integer).

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In the circuit shown below, the current

flowing through 200

resistor is ______ mA (rounded off to two decimal places).

Diagram for Electronics and Communication Engineering question 32

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For the two port network shown below, the [Y]-parameters is given as

The value of load impedance

, in

, for maximum power transfer will be ______ (rounded off to the nearest integer).

Diagram for Electronics and Communication Engineering question 33

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For the circuit shown below, the propagation delay of each NAND gate is 1 ns. The critical path delay, in ns, is ______ (rounded off to the nearest integer).

Diagram for Electronics and Communication Engineering question 34

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In the circuit shown below, switch S was closed for a long time. If the switch is opened at

, the maximum magnitude of the voltage

, in volts, is ______ (rounded off to the nearest integer).

Diagram for Electronics and Communication Engineering question 35

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The value of the integral

over the region R, given in the figure

Diagram for Electronics and Communication Engineering question 55

, is ______ (rounded off to the nearest integer).

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In an extrinsic semiconductor, the hole concentration is given to be

where

is the intrinsic carrier concentration of

. The ratio of electron to hole mobility for equal hole and electron drift current is given as ______ (rounded off to two decimal places).

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GATE ECE format:nat PYQs

Question 63

Question 64

Question 65

Question 31

Question 32

Question 33

Question 34

Question 35

Question 55

Question 56