GATE ECE purpose:exam-prep PYQs & Answers — Page 61

Questions 601–610 of 715. Imported answers require independent review unless marked reviewed.

The input

and the output

of a continuous-time system are related as

. The system is

Your answerChoose one option.

linear and time-variant

linear and time-invariant

non-linear and time-variant

non-linear and time-invariant

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A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?

Your answerChoose one option.

Silicon atoms act as

-type dopants in Arsenic sites and

-type dopants in Gallium sites

Silicon atoms act as

-type dopants in Arsenic sites and

-type dopants in Gallium sites

Silicon atoms act as

-type dopants in Arsenic as well as Gallium sites

Silicon atoms act as

-type dopants in Arsenic as well as Gallium sites

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An n-channel enhancement mode MOSFET is biased at

and

, where

is the gate-to-source voltage,

is the drain-to-source voltage and

is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a

Your answerChoose one option.

voltage source with zero output impedance

voltage source with non-zero output impedance

current source with finite output impedance

current source with infinite output impedance

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Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of

and

corresponding to the

and

regions respectively. At the operational temperature

, assume complete impurity ionization,

, and intrinsic carrier concentration to be

. What is the magnitude of the built-in potential of this device?

Your answerChoose one option.

0.748 V

0.460 V

0.288 V

0.173 V

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bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then

Your answerChoose one option.

the effective base width increases and common-emitter current gain increases

the effective base width increases and common-emitter current gain decreases

the effective base width decreases and common-emitter current gain increases

the effective base width decreases and common-emitter current gain decreases

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For a narrow base PNP BJT, the excess minority carrier concentrations (

for emitter,

for base,

for collector) normalized to equilibrium minority carrier concentrations (

for emitter,

for base,

for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in?

Diagram for Electronics and Communication Engineering question 11

X and Y axes are not to scale

Your answerChoose one option.

Forward active

Saturation

Inverse active

Cutoff

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Consider an

-channel MOSFET having width

, length

, electron mobility in the channel

and oxide capacitance per unit area

. If gate-to-source voltage

, drain-to-source voltage

, threshold voltage

and

, then transconductance

(in mA/V) is _____.

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For the operational amplifier circuit shown, the output saturation voltages are

. The upper and lower threshold voltages for the circuit are, respectively,

Diagram for Electronics and Communication Engineering question 12

Your answerChoose one option.

+5 V and -5 V

+7 V and -3 V

+3 V and -7 V

+3 V and -3 V

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The output

of the diode circuit shown in the figure is connected to an averaging DC voltmeter. The reading on the DC voltmeter in Volts, neglecting the voltage drop across the diode, is _____.

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A good transconductance amplifier should have

Your answerChoose one option.

high input resistance and low output resistance

low input resistance and high output resistance

high input and output resistances

low input and output resistances

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GATE ECE purpose:exam-prep PYQs

Question 8

Question 9

Question 9

Question 10

Question 10

Question 11

Question 11

Question 12

Question 12

Question 13