How to practice Semiconductors

Attempt a question, record the concept and assumptions, then check the available answer. Rework mistakes after revising the relevant concepts. Topic tags can overlap; review the question context.

Questions 1–3 of 3. Imported answers require independent review unless marked reviewed.

Topic practice 3 questionsPage 1 of 1

Question 17

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ECMCQ1 markNeeds review
In a non-degenerate bulk semiconductor with electron density

, the value of

, where

and

denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as

and the intrinsic carrier concentration is

. For

, the closest approximation of the value of

, among the given options, is _________.
Your answerChoose one option.

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Question 47

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ECMSQ2 marksNeeds review
Select the CORRECT statement(s) regarding semiconductor devices.
Your answerSelect all correct options. You can choose more than one.

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Question 56

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ECNAT2 marksNeeds review
A

-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at

, where

cm is the diffusion length for electrons. Assume electronic charge,

C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers (

) are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at

is ________ mA/cm

(rounded off to two decimal places).
Diagram for Electronics and Communication Engineering question 56


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