GATE ECE topic:electronics PYQs & Answers — Page 28

Questions 271–280 of 715. Imported answers require independent review unless marked reviewed.

Consider the two-dimensional vector field

, where

and

denote the unit vectors along the

-axis and the

-axis, respectively. A contour

in the

plane, as shown in the figure, is composed of two horizontal lines connected at the two ends by semicircular arcs of unit radius. The contour is traversed in the counter-clockwise sense. The value of the closed path integral

is ________.

Diagram for Electronics and Communication Engineering question 11

Your answerChoose one option.

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

Consider a system of linear equations

, where

This system of equations admits ________.

Your answerChoose one option.

a unique solution for

infinitely many solutions for

no solutions for

exactly two solutions for

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

The current

in the circuit shown is ________.

Diagram for Electronics and Communication Engineering question 13

Your answerChoose one option.

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

Consider the circuit shown in the figure. The current

flowing through the

resistor is ________.

Diagram for Electronics and Communication Engineering question 14

Your answerChoose one option.

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

The Fourier transform

of the signal

is ________.

Your answerChoose one option.

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

Consider a long rectangular bar of direct bandgap

-type semiconductor. The equilibrium hole density is

and the intrinsic carrier concentration is

. Electron and hole diffusion lengths are

and

, respectively.

The left side of the bar (

) is uniformly illuminated with a laser having photon energy greater than the bandgap of the semiconductor. Excess electron-hole pairs are generated ONLY at

because of the laser. The steady state electron density at

due to laser illumination. Under these conditions and ignoring electric field, the closest approximation (among the given options) of the steady state electron density at

is _________.

Your answerChoose one option.

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

In a non-degenerate bulk semiconductor with electron density

, the value of

, where

and

denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as

and the intrinsic carrier concentration is

. For

, the closest approximation of the value of

, among the given options, is _________.

Your answerChoose one option.

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

Consider the CMOS circuit shown in the figure (substrates are connected to their respective sources). The gate width (

) to gate length (

) ratios (

) of the transistors are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the

MOSFET, the threshold voltage is

and the mobility of holes is

. For the

MOSFET, the threshold voltage is

and the mobility of electrons is

. The steady state output voltage

is _________.

Diagram for Electronics and Communication Engineering question 18

Your answerChoose one option.

equal to 0 V

more than 2 V

less than 2 V

equal to 2 V

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

Consider the 2-bit multiplexer (MUX) shown in the figure. For OUTPUT to be the XOR of C and D, the values for

, and

are ____________.

Diagram for Electronics and Communication Engineering question 19

Your answerChoose one option.

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

The ideal long channel

MOSFET and

MOSFET devices shown in the circuits have threshold voltages of 1 V and

V, respectively. The MOSFET substrates are connected to their respective sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ________________.

Diagram for Electronics and Communication Engineering question 20

Your answerChoose one option.

You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answer

GATE ECE topic:electronics PYQs

Question 11

Question 12

Question 13

Question 14

Question 15

Question 16

Question 17

Question 18

Question 19

Question 20