GATE ECE year:2017 PYQs & Answers — Page 2

Questions 11–20 of 130. Imported answers require independent review unless marked reviewed.

Consider a single input single output discrete-time system with

as input and

as output, where the two are related as

Which one of the following statements is true about the system?

Your answerChoose one option.

It is causal and stable

It is causal but not stable

It is not causal but stable

It is neither causal nor stable

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A connection is made consisting of resistance A in series with a parallel combination of resistances B and C. Three resistors of value 10 Ω, 5 Ω, 2 Ω are provided. Consider all possible permutations of the given resistors into the positions A, B, C, and identify the configurations with maximum possible overall resistance, and also the ones with minimum possible overall resistance. The ratio of maximum to minimum values of the resistances (up to second decimal place) is __________.

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In the circuit shown, the positive angular frequency

(in radians per second) at which the magnitude of the phase difference between the voltages

and

equals

radians, is ______.

Diagram for Electronics and Communication Engineering question 7

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An LTI system with unit sample response

is a

Your answerChoose one option.

low-pass filter

high-pass filter

band-pass filter

band-stop filter

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A periodic signal

has a trigonometric Fourier series expansion

, we can conclude that

Your answerChoose one option.

are zero for all

and

are zero for

even

are zero for all

and

are zero for

odd

are zero for

even and

are zero for

odd

are zero for

odd and

are zero for

even

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The input

and the output

of a continuous-time system are related as

. The system is

Your answerChoose one option.

linear and time-variant

linear and time-invariant

non-linear and time-variant

non-linear and time-invariant

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A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?

Your answerChoose one option.

Silicon atoms act as

-type dopants in Arsenic sites and

-type dopants in Gallium sites

Silicon atoms act as

-type dopants in Arsenic sites and

-type dopants in Gallium sites

Silicon atoms act as

-type dopants in Arsenic as well as Gallium sites

Silicon atoms act as

-type dopants in Arsenic as well as Gallium sites

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An n-channel enhancement mode MOSFET is biased at

and

, where

is the gate-to-source voltage,

is the drain-to-source voltage and

is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a

Your answerChoose one option.

voltage source with zero output impedance

voltage source with non-zero output impedance

current source with finite output impedance

current source with infinite output impedance

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Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of

and

corresponding to the

and

regions respectively. At the operational temperature

, assume complete impurity ionization,

, and intrinsic carrier concentration to be

. What is the magnitude of the built-in potential of this device?

Your answerChoose one option.

0.748 V

0.460 V

0.288 V

0.173 V

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bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then

Your answerChoose one option.

the effective base width increases and common-emitter current gain increases

the effective base width increases and common-emitter current gain decreases

the effective base width decreases and common-emitter current gain increases

the effective base width decreases and common-emitter current gain decreases

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GATE ECE year:2017 PYQs

Question 6

Question 6

Question 7

Question 7

Question 8

Question 8

Question 9

Question 9

Question 10

Question 10