GATE EE concept:mosfet PYQs & Answers

Questions 1–7 of 7. Imported answers require independent review unless marked reviewed.

Consider the circuit shown in Figure (a). A gate pulse

is applied between time instants

and

. After

, during the MOSFET turn OFF process, it experiences a voltage overshoot.

Based on the

waveforms shown in Figure (b), which one of the following options is correct?

Diagram for Electrical Engineering question 28

Your answerChoose one option.

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Consider the single-phase voltage source inverter circuit feeding an inductive load (L). Assume that the power MOSFET switches are ideal. S₁ and S₂ are switched on during the first 10 μs, and S₃ and S₄ are switched on during the next 10 μs in a switching cycle. The switches in the same leg are thus switched in a complementary fashion. Neglect the dead time. The waveform of the inductor current (i_L) in the steady state is triangular with a peak value of 5 A as shown.

Diagram for Electrical Engineering question 47

The rms value of the current through the switch S₁ is:

Your answerChoose one option.

2.8 A

2.04 A

3.54 A

2.50 A

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In the circuit with ideal devices, the power MOSFET is operated with a duty cycle of 0.4 in a switching cycle with

and

. The power delivered by the current source, in W, is __________ (round off to the nearest integer).

Diagram for Electrical Engineering question 34

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If the following switch devices have similar power ratings, which one of them is the fastest?

Your answerChoose one option.

SCR

GTO

IGBT

Power MOSFET

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A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switching frequency of 200 kHz. Which power device is best suited for this purpose?

Your answerChoose one option.

IGBT

Thyristor

MOSFET

BJT

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Four power semiconductor devices are shown in the figure along with their relevant terminals. The device(s) that can carry dc current continuously in the direction shown when gated appropriately is (are)

Diagram for Electrical Engineering question 4

Your answerChoose one option.

Triac only

Triac and MOSFET

Triac and GTO

Thyristor and Triac

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For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?

Your answerChoose one option.

All the four are majority carrier devices.

All the four are minority carrier devices.

IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.

MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.

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GATE EE concept:mosfet PYQs

How to practice concept:mosfet

Question 28

Question 47

Question 34

Question 27

Question 22

Question 4

Question 15