Physics
GATE PH Electronics PYQs
Build your understanding with focused practice from past exam papers.
Questions 11–20 of 40. Imported answers require independent review unless marked reviewed.
Question 11
Open questionPHMCQ1 markNeeds review
For the Op-Amp circuit shown below, choose the correct output waveform corresponding to the input
(in Volts). The saturation voltage for the circuit is
V. 
Your answerChoose one option.
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Open questionPHMSQ1 markNeeds review
For an Op-Amp based negative feedback, non-inverting amplifier, which of the following statements are true?
Your answerSelect all correct options. You can choose more than one.
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Open questionPHMSQ1 markNeeds review
For a bipolar junction transistor, which of the following statements are true?
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Open questionPHNAT1 markNeeds review
A power supply has internal resistance
and open load voltage
. When a load resistance
is connected to the power supply, a voltage drop of
is measured across the load. The value of
is ________ (Round off to the nearest integer)Log in to check the answer
You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answerQuestion 57
Open questionPHMSQ2 marksNeeds review
A junction is formed between a metal on the left and an
-type semiconductor on the right. Before forming the junction, the Fermi level
of the metal lies below that of the semiconductor. Then which of the following schematics are correct for the bands and the
-
characteristics of the junction?Your answerSelect all correct options. You can choose more than one.
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Open questionPHNAT2 marksNeeds review
The minimum number of two-input NAND gates required to implement the following Boolean expression is ____________
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Open questionPHMCQ1 markNeeds review
As shown in the figure, two metal-semiconductor junctions are formed between an n-type semiconductor
and metal
. The work functions of
and
are
and
, respectively with
. 
The
characteristics (on linear scale) of the junctions is best represented byYour answerChoose one option.
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Open questionPHNAT1 markNeeds review
The donor concentration in a sample of n-type silicon is increased by a factor of 100. Assuming the sample to be non-degenerate, the shift in the Fermi level (in meV) at 300 K (rounded off to the nearest integer) is _____.
(Given:
meV at 300 K)Log in to check the answer
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Open questionPHMCQ2 marksNeeds review
The above combination of logic gates represents the operation

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Open questionPHMCQ2 marksNeeds review
In a semiconductor, the ratio of the effective mass of hole to electron is 2:11 and the ratio of average relaxation time for hole to electron is 1:2. The ratio of the mobility of the hole to electron is
Your answerChoose one option.
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