Questions 781–790 of 1772. Imported answers require independent review unless marked reviewed.

Topic practice 1772 questionsPage 79 of 178

Question 59

Open question
XE-CMSQ2 marksNeeds review
For a diffusional transformation (i.e., growth of β precipitates in an α matrix), which of the following is/are true with increasing degree of undercooling?
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Question 60

Open question
XE-CNAT2 marksNeeds review
A two-phase (α + β) mixture in an A-B binary system has the following properties:
(i) Phase α has equal weight percentages of A and B. (ii) Phase β has twice the mole fraction of A compared to B. (iii) The two-phase mixture has equal amounts of α and β. (iv) Atomic mass of A is twice that of B.
The mole fraction of A in the resultant two-phase mixture is _________. (Round off to one decimal)

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Question 61

Open question
XE-CNAT2 marksNeeds review
It is known that component A diffuses into a solid to a depth of 10 μm in 1 hour at 300 K. Treat diffusion in one dimension. The time taken for A to diffuse to the same depth at 600 K is ________ seconds. (Round off to 1 decimal).
Diffusivity of A in the solid is given by


: Diffusivity coefficient

: Activation energy = 0.3 eV

: Boltzmann’s constant = 8.62×10⁻⁵ eV/K

: Absolute temperature

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Question 62

Open question
XE-CNAT2 marksNeeds review
A spherical β particle nucleates from the α matrix on a non-deformable substrate δ, forming a contact angle of θ as shown in the schematic.
The value of

is ________. (Round off to three decimal places)

= Gibbs free energy change at the critical radius for homogeneous nucleation

= Gibbs free energy change at the critical radius for heterogeneous nucleation
α-β interfacial energy = 0.4 J/m²
α-δ interfacial energy = 0.3 J/m²
β-δ interfacial energy = 0.02 J/m²
Diagram for Engineering Sciences question 62


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Question 63

Open question
XE-CNAT2 marksNeeds review
The resistivity of a pure semiconductor at 298 K is 300 Ωm. Assume that the number of electrons excited (

) across the band gap is given by the relation


: Avogadro’s number = 6.02×10²³ mole⁻¹

: Boltzmann’s constant = 8.62×10⁻⁵ eV/K

: Absolute temperature
Mobility of electrons in the semiconductor = 0.14 m²/(V s)
Mobility of holes in the semiconductor = 0.06 m²/(V s)
Absolute charge of an electron = 1.60×10⁻¹⁹ C
The band gap (

) of the semiconductor is ________ eV. (Round off to two decimals)

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Question 64

Open question
XE-CNAT2 marksNeeds review
A new glass material is developed to minimize the transmission of the light through the window with glass panel of thickness 5 mm. The refractive index of the glass material is 1.5 and the absorption coefficient can be changed from 0.3 cm⁻¹ to 1 cm⁻¹. In the given range of absorption coefficients, the ratio of the maximum to the minimum fraction of the light coming out of the other side of the glass panel is ________. (Round off to two decimal places)

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Question 65

Open question
XE-CNAT2 marksNeeds review
The third peak in the X-ray diffraction pattern of a face-centered cubic crystal is at 2θ value of 45°, where 2θ is the angle between the incident and reflected rays. The wavelength of the monochromatic X-ray beam is 1.54 Å. Considering first-order reflection, the lattice parameter of the crystal is ________ Å. (Round off to two decimal places)

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Question 66

Open question
XE-DMCQ1 markNeeds review
A force

is applied at an angle θ = 30° on an elastic column as shown in the figure.

and

are respectively the Young’s modulus and area moment of inertia. The smallest magnitude of

needed to cause buckling is
Diagram for Engineering Sciences question 66

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Question 67

Open question
XE-DMCQ1 markNeeds review
The shear stress due to a transverse shear force in a linear elastic isotropic beam of rectangular cross-section
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Question 68

Open question
XE-DMCQ1 markNeeds review
A massless semicircular rod held fixed at end

in the

-plane, as shown in the figure. A force

along the negative

direction is acting at point

on the rod. The unit vectors along

,

and

directions are denoted respectively as

,

and

. Due to the applied force

, the cross-section of the rod at point

will be subjected to
Diagram for Engineering Sciences question 68

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