Engineering Sciences
GATE XE format:nat PYQs
Build your understanding with focused practice from past exam papers.
Questions 11–20 of 668. Imported answers require independent review unless marked reviewed.
Question 43
Open questionXE-BNAT2 marksNeeds review
Air flows through a pipe of diameter
with an average velocity of 3 m.s
. The Darcy friction factor of the pipe is 0.02. Assume acceleration due to gravity as 10 m.s
. If the head loss per meter is 0.05, the diameter (in m) of the pipe is __________. (rounded off to two decimal places)Log in to check the answer
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Open questionXE-CNAT1 markNeeds review
The degrees of freedom of a system with 2 components and 2 phases in equilibrium is ________ (answer in integer).
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Open questionXE-CNAT1 markNeeds review
The interplanar spacing of
planes is 4.5 nm in a given crystal. For the
planes, the interplanar spacing, in nm, is ________ (rounded off to one decimal place).Log in to check the answer
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Open questionXE-CNAT1 markNeeds review
The equilibrium vacancy concentration in aluminum at 900 K is
. The enthalpy of formation of vacancies, in kJ·mol
, is ________ (rounded off to one decimal place).Given: Universal gas constant = 8.314 J·K
·mol
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Open questionXE-CNAT2 marksNeeds review
Fe has a density of 7.87 g.cm⁻³, atomic mass of 55.84 g.mol⁻¹ and net magnetic moment per atom of 2.22 Bohr magnetons (μB). The saturation magnetization of Fe, in A.m⁻¹, is ________ ×10⁵ (rounded off to one decimal place).
Given: μB = 9.27×10⁻²⁴ A.m², Avogadro number = 6.023×10²³ mol⁻¹
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Open questionXE-CNAT2 marksNeeds review
At the peak (also denoted as UTS) of an engineering stress vs. engineering strain curve for ductile metal, the engineering strain is 0.2. The corresponding true stress (σ) vs. true strain (ε) relationship follows the equation: σ = Kεⁿ, where K and n are constants.
The engineering stress at the peak, in MPa, is ________ (rounded off to one decimal place).
Given: K = 200 MPa
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A 1 cm³ Si cube is doped with As with a concentration of 1 atom per 10⁹ Si atoms. The resistance of the doped Si cube, in Ohms, is ________ (rounded off to one decimal place).
Given:
Atomic concentration of Si = 5×10²² cm⁻³
Intrinsic concentration of electrons in Si = 1×10¹⁰ cm⁻³
Electron mobility in Si = 1350 cm².V⁻¹.s⁻¹
Hole mobility in Si = 450 cm².V⁻¹.s⁻¹
Electron charge = 1.6×10⁻¹⁹ C
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Open questionXE-CNAT2 marksNeeds review
A circular disk-shaped ceramic green body has a relative density of 50%. On sintering, both the height and the diameter of the disk shrink by 20%. The sintered disk’s relative density, in %, is ________ (rounded off to one decimal place).
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Open questionXE-CNAT2 marksNeeds review
The standard electrode potential of Cu²⁺ | Cu is +0.34 V and Zn²⁺ | Zn is −0.76 V. For the Zn | Zn²⁺ || Cu²⁺ | Cu cell, the EMF, in Volts, is ________ (rounded off to two decimal places).
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Open questionXE-DNAT1 markNeeds review
A cart of weight (
) 5 kN, stands on an inclined smooth surface at an angle (
) of 45° as shown in the figure. The cart is maintained in equilibrium by a horizontal force F acting at point S.The value of F is _____ kN (in integer).
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