GATE XE topic:properties-applications-materials PYQs & Answers

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topic:properties-applications-materials

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Questions 1–10 of 79. Imported answers require independent review unless marked reviewed.

Topic practice 79 questionsPage 1 of 8

The band gap of a material is E

and the energy of an incident photon is E

. Optical absorption will occur in this material if,

Your answerChoose one option.

< E

> E

Electron-electron recombination occurs

Electron-hole recombination occurs

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Which of the following is/are polarization mechanisms in dielectric solids?

Your answerSelect all correct options. You can choose more than one.

Mechanical polarization

Ionic polarization

Electronic polarization

Thermal polarization

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According to quantum free electron theory, which of the following statements is/are correct regarding the behavior of valence electrons in a metal?

Your answerSelect all correct options. You can choose more than one.

Valence electrons are localized to individual atoms.

Valence electrons are delocalized within the crystal.

Energy distribution of valence electrons follows Fermi-Dirac statistics.

Energy distribution of valence electrons follows Maxwell-Boltzmann statistics.

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Fe has a density of 7.87 g.cm⁻³, atomic mass of 55.84 g.mol⁻¹ and net magnetic moment per atom of 2.22 Bohr magnetons (μB). The saturation magnetization of Fe, in A.m⁻¹, is ________ ×10⁵ (rounded off to one decimal place).

Given: μB = 9.27×10⁻²⁴ A.m², Avogadro number = 6.023×10²³ mol⁻¹

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At the peak (also denoted as UTS) of an engineering stress vs. engineering strain curve for ductile metal, the engineering strain is 0.2. The corresponding true stress (σ) vs. true strain (ε) relationship follows the equation: σ = Kεⁿ, where K and n are constants.

The engineering stress at the peak, in MPa, is ________ (rounded off to one decimal place).

Given: K = 200 MPa

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A 1 cm³ Si cube is doped with As with a concentration of 1 atom per 10⁹ Si atoms. The resistance of the doped Si cube, in Ohms, is ________ (rounded off to one decimal place).

Given: Atomic concentration of Si = 5×10²² cm⁻³ Intrinsic concentration of electrons in Si = 1×10¹⁰ cm⁻³ Electron mobility in Si = 1350 cm².V⁻¹.s⁻¹ Hole mobility in Si = 450 cm².V⁻¹.s⁻¹ Electron charge = 1.6×10⁻¹⁹ C

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The unit of measurement for magnetic dipole moment of a body is

Your answerChoose one option.

A m

Wb m

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B is the magnetic flux density and T

is the critical temperature. The Meissner effect is represented by

Your answerChoose one option.

B = 0 at T ≤ T

B = 0 at T > T

B ≠ 0 at T ≤ T

∇ B = 0 at T = T

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Which of the following phenomenon/phenomena contribute to intensity loss of electromagnetic radiation during transmission through a medium?

Your answerSelect all correct options. You can choose more than one.

Electronic absorption

Rayleigh scattering

Photon – phonon interaction

Stimulated emission

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A GaP–GaAs semiconductor LED display has a band gap of 1.9 eV. The wavelength of emitted light in

m is (round off to two decimal places) __________

Given: Planck’s constant = 6.63 × 10

J s Velocity of light = 3 × 10

m s

1 eV = 1.6 × 10

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GATE XE topic:properties-applications-materials PYQs

How to practice topic:properties-applications-materials

Question 44

Question 48

Question 60

Question 61

Question 62

Question 63

Question 45

Question 46

Question 50

Question 52