GATE ECE 2017 question paper — Paper 2
65 questions · 100 imported marks. Browse the original paper or practise online.
Questions
65
Across all archived sections
Imported marks
100
As recorded in the source
Sections
2
EC · GA
Year
2017
Archive paper 2
01 · START HERE
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02 · PAPER STRUCTURE
What’s inside this paper?
Question counts and marks reflect the imported source, grouped by section.
Electronics and Communication Engineering
- Questions
- 55
- Imported marks
- 85
General Aptitude
- Questions
- 10
- Imported marks
- 15
03 · QUESTION BROWSER
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Section
Question type
Showing 1–12 of 65 questions
EC · Question 1
Electronics and Communication Engineering
The rank of the matrix is .
EC · Question 2
Electronics and Communication Engineering
The general solution of the differential equation in terms of arbitrary constants and is
EC · Question 3
Electronics and Communication Engineering
The smaller angle (in degrees) between the planes and is .
EC · Question 4
Electronics and Communication Engineering
The residues of a function are
EC · Question 5
Electronics and Communication Engineering
In the circuit shown, V is a sinusoidal voltage source. The current I is in phase with voltage V. The ratio is .
EC · Question 6
Electronics and Communication Engineering
A connection is made consisting of resistance A in series with a parallel combination of resistances B and C. Three resistors of value 10 Ω, 5 Ω, 2 Ω are provided. Consi…
EC · Question 7
Electronics and Communication Engineering
An LTI system with unit sample response is a
EC · Question 8
Electronics and Communication Engineering
The input and the output of a continuous-time system are related as . The system is
EC · Question 9
Electronics and Communication Engineering
An n-channel enhancement mode MOSFET is biased at and , where is the gate-to-source voltage, is the drain-to-source voltage and is the threshold voltage. Considering cha…
EC · Question 10
Electronics and Communication Engineering
An bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then
EC · Question 11
Electronics and Communication Engineering
Consider an -channel MOSFET having width , length , electron mobility in the channel and oxide capacitance per unit area . If gate-to-source voltage , drain-to-source vo…
EC · Question 12
Electronics and Communication Engineering
The output of the diode circuit shown in the figure is connected to an averaging DC voltmeter. The reading on the DC voltmeter in Volts, neglecting the voltage drop acro…
04 · CONTINUE PREPARING
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Question text and tags are imported from paper sources and require independent review unless explicitly marked reviewed. For diagrams, equations and official instructions, refer to the original paper viewer.