GATE ECE 2020 Paper 1 — page 6

Questions 16–18 of 65. Imported answers require review unless explicitly marked reviewed.

A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV.

The intrinsic Fermi level is shifted from mid-band energy level by

Your answerChoose one option.

18.02 meV.

9.01 meV.

13.45 meV.

26.90 meV.

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Consider the recombination process via bulk traps in a forward biased

homojunction diode. The maximum recombination rate is

. If the electron and the hole capture cross-sections are equal, which one of the following is FALSE?

Your answerChoose one option.

With all other parameters unchanged,

decreases if the intrinsic carrier density is reduced.

occurs at the edges of the depletion region in the device.

depends exponentially on the applied bias.

With all other parameters unchanged,

increases if the thermal velocity of the carriers increases.

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The components in the circuit shown below are ideal. If the op-amp is in positive feedback and the input voltage

is a sine wave of amplitude 1 V, the output voltage

Diagram for Electronics and Communication Engineering question 8

Your answerChoose one option.

a non-inverted sine wave of 2 V amplitude.

an inverted sine wave of 1 V amplitude.

a square wave of 5 V amplitude.

a constant of either +5 V or −5 V.

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2020 · Paper 1

Question 6

Question 7

Question 8