Electronics and Communication Engineering
2022 · Paper 1
Take it one question at a time. Try an answer, then check your understanding.
Complete GATE ECE 2022 Paper 1 overview, original pages and practice · Timed previous-paper practice
Questions 40–42 of 65. Imported answers require review unless explicitly marked reviewed.
Question 40
Open questionECMCQ2 marksNeeds review
Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 μm and width 100 μm. The product of electron mobility (
) and oxide capacitance per unit area (
) is
mA/V
. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage
V and drain-to-source voltage
V (substrate connected to the source), the maximum value of the drain-to-source current is ______.Your answerChoose one option.
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Open questionECMCQ2 marksNeeds review
For the following circuit with an ideal OPAMP, the difference between the maximum and the minimum values of the capacitor voltage (
) is ________. 
Your answerChoose one option.
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You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answerQuestion 42
Open questionECMCQ2 marksNeeds review
A circuit with an ideal OPAMP is shown. The Bode plot for the magnitude (in dB) of the gain transfer function (
) of the circuit is also provided (here,
is the angular frequency in rad/s). The values of
and
are ____________. 
Your answerChoose one option.
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