Complete GATE ECE 2022 Paper 1 overview, original pages and practice · Timed previous-paper practice

Questions 16–18 of 65. Imported answers require review unless explicitly marked reviewed.

Paper practice 65 questionsPage 6 of 22

Question 16

Open question
ECMCQ1 markNeeds review
Consider a long rectangular bar of direct bandgap

-type semiconductor. The equilibrium hole density is

and the intrinsic carrier concentration is

. Electron and hole diffusion lengths are

and

, respectively.
The left side of the bar (

) is uniformly illuminated with a laser having photon energy greater than the bandgap of the semiconductor. Excess electron-hole pairs are generated ONLY at

because of the laser. The steady state electron density at

is

due to laser illumination. Under these conditions and ignoring electric field, the closest approximation (among the given options) of the steady state electron density at

is _________.
Your answerChoose one option.

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Question 17

Open question
ECMCQ1 markNeeds review
In a non-degenerate bulk semiconductor with electron density

, the value of

, where

and

denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as

and the intrinsic carrier concentration is

. For

, the closest approximation of the value of

, among the given options, is _________.
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Question 18

Open question
ECMCQ1 markNeeds review
Consider the CMOS circuit shown in the figure (substrates are connected to their respective sources). The gate width (

) to gate length (

) ratios (

) of the transistors are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the

MOSFET, the threshold voltage is

and the mobility of holes is

. For the

MOSFET, the threshold voltage is

and the mobility of electrons is

. The steady state output voltage

is _________.
Diagram for Electronics and Communication Engineering question 18

Your answerChoose one option.

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