GATE ECE · 2021 · EC
Question 6: Electronic Devices
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Question 6
ECMCQ1 markNeeds review
A bar of silicon is doped with boron concentration of
and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of
. If the recombination lifetime is 100
s, intrinsic carrier concentration of silicon is
and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isYour answerChoose one option.
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2021EC
GATE ECE 2021 · Paper 1
Electronics and Communication Engineering · Original paper archive
- Section
- Electronics and Communication Engineering
- Question type
- Multiple choice (MCQ)
- Marks
- 1 mark
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