GATE XE · 2023 · XE-C
Question 60: Thermodynamics, Kinetics and Phase Transformations
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Question 60
XE-CNAT2 marksNeeds review
A pure Silicon wafer is doped with Boron by exposing it to B₂O₃ vapour at an elevated temperature. It takes 1000 seconds to reach a Boron concentration of
at a depth of 1
m. The time taken to reach the same concentration of Boron at a depth of 2
m is (in seconds): ________ (rounded off to nearest integer)Given: Boron concentration on the wafer surface remains constant.
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2023XE-C
GATE XE 2023 · Paper 1
Engineering Sciences · Original paper archive
- Section
- Section XE-C
- Question type
- Numerical answer (NAT)
- Marks
- 2 marks
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