GATE EE · 2020 · EE
Question 25: Analog and Digital Electronics
Give it a try, then reveal the answer to check your work.
Question 25
EENAT1 markNeeds review
The cross-section of a metal-oxide-semiconductor structure is shown schematically.
Starting from an uncharged condition, a bias of +3 V is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be +Q. The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of Q (absolute value in Coulombs, rounded off to the nearest integer) is ________.
Log in to check the answer
You can attempt this question now. Sign in to view the answer key, explanations and discussion.Log in to check answerEXPLORE & PRACTISE
Paper and topic context
See where this question comes from and choose what to practise next.
2020EE
GATE EE 2020 · Paper 1
Electrical Engineering · Original paper archive
- Section
- Electrical Engineering
- Question type
- Numerical answer (NAT)
- Marks
- 1 mark
Practise related topics
Explore more previous year questions using this question’s imported topic tags.
electrical engineering
GATE EE previous year questions
electrical power
GATE EE previous year questions
electrical machines
GATE EE previous year questions
analog and digital electronics
GATE EE previous year questions
Comments
Ask a question, share your approach, or help someone understand.
Log in to view the discussion
You’re not logged in. Log in or create an account to see discussions and add comments.