GATE ECE Semiconductor devices PYQs & Answers

Questions 1–5 of 5. Imported answers require independent review unless marked reviewed.

Consider the CMOS circuit shown in the figure (substrates are connected to their respective sources). The gate width (

) to gate length (

) ratios (

) of the transistors are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the

MOSFET, the threshold voltage is

and the mobility of holes is

. For the

MOSFET, the threshold voltage is

and the mobility of electrons is

. The steady state output voltage

is _________.

Diagram for Electronics and Communication Engineering question 18

Your answerChoose one option.

equal to 0 V

more than 2 V

less than 2 V

equal to 2 V

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The ideal long channel

MOSFET and

MOSFET devices shown in the circuits have threshold voltages of 1 V and

V, respectively. The MOSFET substrates are connected to their respective sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ________________.

Diagram for Electronics and Communication Engineering question 20

Your answerChoose one option.

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An ideal MOS capacitor (

-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with

V. The corresponding inversion charge density (

) is 2.2

C/cm

. Assume oxide capacitance per unit area as

F/cm

. For

V, the value of

is _____

C/cm

(rounded off to one decimal place).

Diagram for Electronics and Communication Engineering question 34

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Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 μm and width 100 μm. The product of electron mobility (

) and oxide capacitance per unit area (

) is

mA/V

. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage

V and drain-to-source voltage

V (substrate connected to the source), the maximum value of the drain-to-source current is ______.

Your answerChoose one option.

40 mA

20 mA

15 mA

5 mA

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Select the CORRECT statement(s) regarding semiconductor devices.

Your answerSelect all correct options. You can choose more than one.

Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium.

Collector region is generally more heavily doped than Base region in a BJT.

Total current is spatially constant in a two terminal electronic device in dark under steady state condition.

Mobility of electrons always increases with temperature in Silicon beyond 300 K.

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GATE ECE Semiconductor devices PYQs

How to practice Semiconductor devices

Question 18

Question 20

Question 34

Question 40

Question 47