GATE ECE · 2022 · EC
Question 34: Semiconductor devices
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Question 34
ECNAT1 markNeeds review
An ideal MOS capacitor (
-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with
V. The corresponding inversion charge density (
) is 2.2
C/cm
. Assume oxide capacitance per unit area as
F/cm
. For
V, the value of
is _____
C/cm
(rounded off to one decimal place). 
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2022EC
GATE ECE 2022 · Paper 1
Electronics and Communication Engineering · Original paper archive
- Section
- Electronics and Communication Engineering
- Question type
- Numerical answer (NAT)
- Marks
- 1 mark
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