GATE ECE topic:communication-engineering PYQs & Answers — Page 66

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Questions 651–660 of 715. Imported answers require independent review unless marked reviewed.

Topic practice 715 questionsPage 66 of 72

Consider an LTI system with magnitude response

and phase response

. If the input to the system is

then the average power of the output signal

is ________.

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The figure shows an RLC circuit excited by the sinusoidal voltage

Volts, where

is in seconds. The ratio

is __________.

Diagram for Electronics and Communication Engineering question 34

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The transfer function of a causal LTI system is

. If the input to the system is

, where

is a unit step function, the system output

is ________.

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In the circuit shown, the voltage

is described by:

where

is in seconds. The time (in seconds) at which the current

in the circuit will reach the value 2 Amperes is __________.

Diagram for Electronics and Communication Engineering question 35

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Consider the parallel combination of two LTI systems shown in the figure. The impulse responses of the systems are

and

. If the input

is a unit step signal, then the energy of

is ________.

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The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of

and electronic charge

. If a bias of 5 V is applied across a 1

m region of this semiconductor, the resulting current density in this region, in kA/cm

, is __________.

Diagram for Electronics and Communication Engineering question 36

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A MOS capacitor is fabricated on

-type Si (Silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV.

eV, where

and

are the conduction band minimum and the Fermi energy levels of Si, respectively. Oxide

F/cm, oxide thickness

m and electronic charge

C. If the measured flat band voltage of this capacitor is −1 V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in nC/cm

, is ______.

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As shown, a uniformly doped Silicon (Si) bar of length

with a donor concentration

is illuminated at

such that electron and hole pairs are generated at the rate of

, where

. Hole lifetime is

s, electronic charge

, hole diffusion coefficient

and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at

, the magnitude of the diffusion current density at

, in A/cm

, is __________.

Diagram for Electronics and Communication Engineering question 37

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For a particular intensity of incident light on a silicon

junction solar cell, the photocurrent density (

) is 2.5 mA/cm

and the open-circuit voltage (

) is 0.451 V. Consider thermal voltage (

) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged,

(in volts) will be ________.

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As shown, two Silicon (Si) abrupt

junction diodes are fabricated with uniform donor doping concentrations of

and

in the

-regions of the diodes, and uniform acceptor doping concentrations of

and

in the

-regions of the diodes, respectively. Assuming that the reverse bias voltage is

built-in potentials of the diodes, the ratio

of their reverse bias capacitances for the same applied reverse bias, is ________.

Diagram for Electronics and Communication Engineering question 38

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GATE ECE topic:communication-engineering PYQs

Question 33

Question 34

Question 34

Question 35

Question 35

Question 36

Question 36

Question 37

Question 37

Question 38