GATE ECE · 2017 · EC
Question 37: Carrier transport
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Question 37
ECNAT2 marksNeeds review
As shown, a uniformly doped Silicon (Si) bar of length
with a donor concentration
is illuminated at
such that electron and hole pairs are generated at the rate of
,
, where
. Hole lifetime is
s, electronic charge
, hole diffusion coefficient
and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at
, the magnitude of the diffusion current density at
, in A/cm
, is __________.
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2017EC
GATE ECE 2017 · Paper 1
Electronics and Communication Engineering · Original paper archive
- Section
- Electronics and Communication Engineering
- Question type
- Numerical answer (NAT)
- Marks
- 2 marks
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