Questions 11–20 of 65. Imported answers require independent review unless marked reviewed.

Topic practice 65 questionsPage 2 of 7

Question 1

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The vector function

is defined over a circular arc

shown in the figure.
Diagram for Electronics and Communication Engineering question 1

The line integral of

is
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Question 2

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Consider the differential equation given below.

The integrating factor of the differential equation is
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Question 3

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Two continuous random variables

and

are related as

Let

and

denote the variances of

and

, respectively. The variances are related as
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Question 4

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Consider a real-valued base-band signal

, band limited to 10 kHz. The Nyquist rate for the signal

is
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Question 5

Open question
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Consider two 16-point sequences

and

. Let the linear convolution of

and

be denoted by

, while

denotes the 16-point inverse discrete Fourier transform (IDFT) of the product of the 16-point discrete Fourier transforms (DFTs) of

and

. The value(s) of

for which

is/are
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Question 6

Open question
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A bar of silicon is doped with boron concentration of

and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of

. If the recombination lifetime is 100

s, intrinsic carrier concentration of silicon is

and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is
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Question 7

Open question
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The energy band diagram of a p-type semiconductor bar of length L under equilibrium condition (i.e., the Fermi energy level

is constant) is shown in the figure. The valence band

is sloped since doping is non-uniform along the bar. The difference between the energy levels of the valence band at the two edges of the bar is

.
Diagram for Electronics and Communication Engineering question 7

If the charge of an electron is q, then the magnitude of the electric field developed inside this semiconductor bar is
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Question 8

Open question
ECMCQ1 markNeeds review
In the circuit shown in the figure, the transistors

and

are operating in saturation. The channel length modulation coefficients of both the transistors are non-zero. The transconductance of the MOSFETs

and

are

and

, respectively, and the internal resistance of the MOSFETs

and

are

and

, respectively.
Diagram for Electronics and Communication Engineering question 8

Ignoring the body effect, the ac small signal voltage gain (

) of the circuit is
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Question 9

Open question
ECMCQ1 markNeeds review
For the circuit with an ideal OPAMP shown in the figure,

is fixed.
Diagram for Electronics and Communication Engineering question 9

If

volt for

volt and

volt for

volt, where

is measured across

connected at the output of this OPAMP, the value of

is
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Question 10

Open question
ECMCQ1 markNeeds review
Consider the circuit with an ideal OPAMP shown in the figure. Assuming

and

, the condition at which

equals to zero is
Diagram for Electronics and Communication Engineering question 10

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