Questions 31–40 of 57. Imported answers require independent review unless marked reviewed.

Topic practice 57 questionsPage 4 of 6

Question 52

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A CMOS Schmitt-trigger inverter has a low output level of 0 V and a high output level of 5 V. It has input thresholds of 1.6 V and 2.4 V. The input capacitance and output resistance of the Schmitt-trigger are negligible. The frequency of the oscillator shown is ________ Hz. (Round off to 2 decimal places.)
Diagram for Electrical Engineering question 52


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Question 14

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A common-source amplifier with a drain resistance,

, is powered using a 10 V power supply. Assuming that the transconductance,

, is 520

A/V, the voltage gain of the amplifier is closest to:
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Question 15

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A sequence detector is designed to detect precisely 3 digital inputs, with overlap sequences detectable. For the sequence (1,0,1) and input data (1,1,0,1,0,0,1,1,0,1,0,1,1,0), what is the output of this detector?
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Question 25

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The cross-section of a metal-oxide-semiconductor structure is shown schematically.
Diagram for Electrical Engineering question 25

Starting from an uncharged condition, a bias of +3 V is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be +Q. The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of Q (absolute value in Coulombs, rounded off to the nearest integer) is ________.

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Question 30

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Consider the diode circuit shown below. The diode D obeys the current-voltage characteristic

, where

,

,

is the voltage across the diode and

is the current through it. The circuit is biased so that voltage,

and current,

. If you had to design this circuit to transfer maximum power from the current source (

) to a resistive load (not shown at the output), what values of

and

would you choose?
Diagram for Electrical Engineering question 30

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Question 31

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A non-ideal diode is biased with a voltage of −0.03 V, and a diode current of

is measured. The thermal voltage is 26 mV and the ideality factor for the diode is 15/13. The voltage, in V, at which the measured current increases to

is closest to:
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Question 54

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An 8085 microprocessor accesses two memory locations (2001H) and (2002H), that contain 8-bit numbers 98H and B1H, respectively. The following program is executed:
LXI H,2001H
MVI A, 21H
INX H
ADD M
INX H
MOV M, A
HLT
At the end of this program, the memory location 2003H contains the number in decimal (base 10) form ________.

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Question 16

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Given,

is the gate-source voltage,

is the drain source voltage, and

is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are
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Question 33

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The enhancement type MOSFET in the circuit below operates according to the square law.

, the threshold voltage (

) is 500 mV. Ignore channel length modulation. The output voltage

is
Diagram for Electrical Engineering question 33

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Question 34

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In the circuit below, the operational amplifier is ideal. If

mV and

mV, the output voltage (

) is
Diagram for Electrical Engineering question 34

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