Electronics and Communication Engineering
2024 · Paper 1
Take it one question at a time. Try an answer, then check your understanding.
Complete GATE ECE 2024 Paper 1 overview, original pages and practice · Timed previous-paper practice
Questions 61–63 of 65. Imported answers require review unless explicitly marked reviewed.
Question 61
Open questionECNAT2 marksNeeds review
Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of
at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is
. If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is ______.Log in to check the answer
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In the network shown below, maximum power is to be transferred to the load
.
The value of
(in
) is ______.Log in to check the answer
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Open questionECNAT2 marksNeeds review
A non-degenerate n-type semiconductor has 5% neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band (
) and the donor energy level (
) has a degeneracy of 2. Assuming the thermal voltage to be 20 mV, the difference between
and
(in eV, rounded off to two decimal places) is __________.Log in to check the answer
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