GATE ECE · 2024 · EC
Question 61: P-N junction
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Question 61
ECNAT2 marksNeeds review
Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of
at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is
. If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is ______.Log in to check the answer
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2024EC
GATE ECE 2024 · Paper 1
Electronics and Communication Engineering · Original paper archive
- Section
- Electronics and Communication Engineering
- Question type
- Numerical answer (NAT)
- Marks
- 2 marks
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