GATE EE · 2020 · EE
Question 20: Power Electronics
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Question 20
EENAT1 markNeeds review
A double pulse measurement for an inductively loaded circuit controlled by the IGBT switch is carried out to evaluate the reverse recovery characteristics of the diode, D, represented approximate as a piecewise linear plot of current vs time at diode turn-off.
is a parasitic inductance due to the wiring of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering 1, 2, 3 or 4) at which the IGBT experiences the highest current stress is ____________. 
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2020EE
GATE EE 2020 · Paper 1
Electrical Engineering · Original paper archive
- Section
- Electrical Engineering
- Question type
- Numerical answer (NAT)
- Marks
- 1 mark
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