GATE ECE · 2018 · EC
Question 45: P-N junction
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Question 45
ECNAT2 marksNeeds review
A junction is made between p
Si with doping density
and p Si with doping density
.Given: Boltzmann constant
, electronic charge
. Assume 100% acceptor ionization.At room temperature (
K), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be __________________.Log in to check the answer
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2018EC
GATE ECE 2018 · Paper 1
Electronics and Communication Engineering · Original paper archive
- Section
- Electronics and Communication Engineering
- Question type
- Numerical answer (NAT)
- Marks
- 2 marks
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