GATE XE · 2020 · XE-C
Question 16: Properties and Applications of Materials
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Question 16
XE-CNAT2 marksNeeds review
Pure silicon (Si) has a band gap (Eg) of 1.1 eV. This Si is doped with 1 ppm (parts per million) of phosphor atoms. Si contains 5 × 10²⁸ atoms per m³ in pure form. At temperature T = 300 K, the shift in Fermi energy upon doping with respect to intrinsic Fermi level of pure Si will be ______ eV (with appropriate sign and round-off to two decimal places).
Intrinsic carrier concentration of Si, ni, is given as:
Given:
Mass of an electron, m = 9.1 × 10⁻³¹ kg
Charge of an electron, e = 1.6 × 10⁻¹⁹ C
Boltzmann constant, kB = 1.38 × 10⁻²³ J.K⁻¹
Planck’s constant, h = 6.6 × 10⁻³⁴ J.s⁻¹
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2020XE-C
GATE XE 2020 · Paper 1
Engineering Sciences · Original paper archive
- Section
- Section XE-C
- Question type
- Numerical answer (NAT)
- Marks
- 2 marks
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