GATE ECE · 2020 · EC
Question 32: Electronic Devices
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Question 32
ECMCQ2 marksNeeds review
The band diagram of a
-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having
of
V,
of
nF/cm
and a metal work function of 3.87 eV is fabricated. There is no charge in the oxide. If the voltage across the capacitor is
, the magnitude of depletion charge per unit area (in C/cm
) is
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2020EC
GATE ECE 2020 · Paper 1
Electronics and Communication Engineering · Original paper archive
- Section
- Electronics and Communication Engineering
- Question type
- Multiple choice (MCQ)
- Marks
- 2 marks
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