GATE ECE · 2025 · EC
Question 48: Carrier transport
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Question 48
ECMCQ2 marksNeeds review
The electron mobility μₙ in a non-degenerate germanium semiconductor at 300 K is 0.38 m²/Vs.
The electron diffusivity Dₙ at 300 K (in cm²/s, rounded off to the nearest integer) is ______.
(Consider the Boltzmann constant kB = 1.38 × 10⁻²³ J/K and the charge of an electron e = 1.6 × 10⁻¹⁹ C.)
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2025EC
GATE ECE 2025 · Paper 1
Electronics and Communication Engineering · Original paper archive
- Section
- Electronics and Communication Engineering
- Question type
- Multiple choice (MCQ)
- Marks
- 2 marks
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